III-nitride blue microdisplays
Identifieur interne : 010422 ( Main/Repository ); précédent : 010421; suivant : 010423III-nitride blue microdisplays
Auteurs : RBID : Pascal:01-0100571Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5×0.5mm2 and consists of 10×10 pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L-I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems. © 2001 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 011A99
Links to Exploration step
Pascal:01-0100571Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">III-nitride blue microdisplays</title><author><name sortKey="Jiang, H X" uniqKey="Jiang H">H. X. Jiang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Jin, S X" uniqKey="Jin S">S. X. Jin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Li, J" uniqKey="Li J">J. Li</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Shakya, J" uniqKey="Shakya J">J. Shakya</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author><author><name sortKey="Lin, J Y" uniqKey="Lin J">J. Y. Lin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Kansas</region></placeName><wicri:cityArea>Department of Physics, Kansas State University, Manhattan</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0100571</idno><date when="2001-02-26">2001-02-26</date><idno type="stanalyst">PASCAL 01-0100571 AIP</idno><idno type="RBID">Pascal:01-0100571</idno><idno type="wicri:Area/Main/Corpus">011A99</idno><idno type="wicri:Area/Main/Repository">010422</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>LED displays</term><term>Semiconductor quantum wells</term><term>Wide band gap semiconductors</term><term>quantum well devices</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8560P</term><term>8535B</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Semiconducteur bande interdite large</term><term>Puits quantique semiconducteur</term><term>Affichage LED</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5×0.5mm<sup>2</sup> and consists of 10×10 pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L-I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems. © 2001 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>78</s2></fA05><fA06><s2>9</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>III-nitride blue microdisplays</s1></fA08><fA11 i1="01" i2="1"><s1>JIANG (H. X.)</s1></fA11><fA11 i1="02" i2="1"><s1>JIN (S. X.)</s1></fA11><fA11 i1="03" i2="1"><s1>LI (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>SHAKYA (J.)</s1></fA11><fA11 i1="05" i2="1"><s1>LIN (J. Y.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>1303-1305</s1></fA20><fA21><s1>2001-02-26</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0100571</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Prototype blue microdisplays have been fabricated from InGaN/GaN quantum wells. The device has a dimension of 0.5×0.5mm<sup>2</sup> and consists of 10×10 pixels 12 μm in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L-I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of III-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-brightness/resolution/contrast, high-temperature/high-power operation, high shock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems. © 2001 American Institute of Physics.</s0> </fC01><fC02 i1="01" i2="X"><s0>001D03H</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F01</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8560P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8535B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur bande interdite large</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Wide band gap semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>quantum well devices</s0><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Affichage LED</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>LED displays</s0></fC03><fN21><s1>064</s1></fN21><fN47 i1="01" i2="1"><s0>0109M000950</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 010422 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 010422 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:01-0100571
|texte= III-nitride blue microdisplays
}}
| This area was generated with Dilib version V0.5.77. |  |